Demagnification measurement method for charged particle beam exposure apparatus, stage phase measurement method for charged particle beam exposure apparatus, control method for charged particle beam exposure apparatus, and charged particle beam exposure apparatus

ABSTRACT

A method for measuring a demagnification of a charged particle beam exposure apparatus includes measuring a first stage position of a mask stage in accordance with a mask stage coordinate system, irradiating a first charged particle beam to a first irradiation position on a specimen through the opening portion of the mask, measuring the first irradiation position in accordance with a specimen stage coordinate system, moving the mask stage to a second stage position, measuring the second stage position of the mask stage, irradiating a second charged particle beam to a second irradiation position on the specimen through the opening portion of the mask measuring the second irradiation position in accordance with the specimen stage coordinate system, and calculating a demagnification of the charged particle beam exposure apparatus from the first and second stage positions and the first and second irradiation positions.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2002-382394, filed Dec. 27,2002, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to lithography using a charged particle beam. Morespecifically, the invention relates to a stage phase measurement methodfor a charged particle beam exposure apparatus for measuring the phaseof a mask stage coordinate system for a specimen stage coordinate systemof a charged particle beam exposure apparatus; a demagnificationmeasurement method for a charged particle beam exposure apparatus formeasuring the demagnification for image projection onto a mask specimensurface; a control method for a charged particle beam exposure apparatusfor performing control corresponding the measured phase anddemagnification; and a charged particle beam exposure apparatus.

2. Description of the Related Art

With increasingly fined semiconductor devices, studies and research arebeing made regarding charged particle beam exposure apparatuses forexposure patterns.

Demagnification lenses and objective lenses are used to demagnify andtransferring a mask pattern onto a specimen. The mask pattern isdemagnified by these lenses and the pattern is rotated by a magneticfield, so that the phase of the pattern to be transferred onto thesurface of the specimen is varied concurrently with deflection indemagnification. The apparatus is designed by taking both the rotationand the demagnification into account, and the apparatus is designed sothat the rotation is performed at a desired demagnification.Practically, however, design errors and manufacture errors disableobtaining the condition concurrently allowing the desireddemagnification and the desired rotation to be exhibited. A process formeasuring the demagnification and pattern rotation angle is disclosed inJpn. Pat. Appln. KOKAI Publication No. 7-22349.

A rotational error of the pattern is correctable by using a rotationstage that carries the mask. However, since no means is provided tocorrect the movement direction of a mask stage X and the movementdirection of a mask stage Y, the system phase of the mask stagecoordinate system remains mismatched with the specimen stage coordinatesystem.

Because of assembly errors, design errors, and lens system adjustmenterrors, the mask stage coordinate system has errors for the specimenstage coordinate system; and generally, it does not have means foradjusting the errors. While an XY mask stage should be mounted to onemore θ stage to adjust the phase of an XY mask stage, since theconstruction is thereby completed and free space in an electroopticalhousing is insufficient, it is difficult to mount the XY mask stage.When moving a desired mask pattern with the mask stage to the vicinityof the beam, if such errors as those described above are zero, themovement position can be determined in accordance with pattern designvalues. However, a problem arises in that an accurate movement positionof the pattern cannot be known, so that accurate movement cannot beimplemented.

Regarding a demagnification measurement method, using a design distanceD between two opening portions provided in the mask and a distance dbetween individual beam specimen surface positions formed in the openingportions, the demagnification has been obtained by way of“demagnification M=d/D”. However, errors such as those occurring in themanufacture of the opening portions and distortion undesirably influencethe calculation result. In a case where the manufacture error is 50 nmand the distance between the opening portions is 500 μm, the caseresults in causing an error of 0.01% (50 nm/500 μm×100). When performingscan-exposure of a 300 μm mask pattern by using the demagnification,there arises the problem of causing an image-dimensional error of aslarge as 30 nm (i.e., 300 μm×0.01%=30 nm).

Further, a problem arises in that an accurate pattern cannot be imagedonto the specimen since no method is available to measure the phase ofthe mask stage coordinate system with respect to the problem ofdemagnification measurement errors and the specimen stage coordinatesystem.

BRIEF SUMMARY OF THE INVENTION

A demagnification measurement method for a charged particle beamexposure apparatus, according to an aspect of the present invention,comprises: measuring a first stage position of a mask stage of thecharged particle beam exposure in accordance with a mask stagecoordinate system with an opening portion of a mask placed on the maskstage being situated in a first opening position; irradiating a firstcharged particle beam to a first irradiation position on a surface of aspecimen through the opening portion of the mask, the first chargedparticle beam being shaped through the opening portion and then passingthrough an objective lens system; measuring the first irradiationposition in accordance with a specimen stage coordinate system; movingthe mask stage to a second stage position to situate the opening portionof the mask in a second opening position different from the firstopening position; measuring the second stage position of the mask stagein accordance with the mask stage coordinate system; irradiating asecond charged particle beam to a second irradiation position on thesurface of the specimen through the opening portion of the mask movedtogether with the mask stage, the second charged particle beam beingshaped through the opening portion situated in the second openingposition and then passing through an objective lens system; measuringthe second irradiation position in accordance with the specimen stagecoordinate system; and calculating a demagnification of the objectivelens system from the first and second stage positions and the first andsecond irradiation positions.

A stage phase measurement method for a charged particle beam exposureapparatus, according to another aspect of the present invention,comprises: measuring a rotation angle of a pattern of a charged particlebeam shaped through a mask placed on a mask stage of the chargedparticle beam exposure apparatus and then irradiated on a surface of aspecimen through an objective optical system; correcting rotation of thepattern by rotating the mask corresponding to the measured rotationangle; measuring a first stage position of the mask stage in accordancewith a mask stage coordinate system after correcting the rotation withan opening portion of the mask being situated in a first openingposition; irradiating a first charged particle beam to a firstirradiation position on the surface of the specimen through the openingportion of the mask, the first charged particle beam being shapedthrough the opening portion and then passing through an objective lenssystem; measuring the first irradiation position in accordance with aspecimen stage coordinate system; moving the mask stage to a secondstage position to situate the opening portion in a second openingposition different from the first opening position; measuring the secondstage position of the mask stage in accordance with the mask stagecoordinate system; irradiating a second charged particle beam to asecond irradiation position on the surface of the specimen through theopening of the mask moved together with the mask stage, the secondcharged particle beam shaped through the opening portion situated in thesecond opening position and then passing through the objective lenssystem; measuring the second irradiation position in accordance with aspecimen stage coordinate system; and calculating a phase differencebetween the specimen stage coordinate system and the mask stagecoordinate system from the first and second stage positions and thefirst and second irradiation positions.

A control method for a charged particle beam exposure apparatus,according to another aspect of the present invention, comprises:measuring a first stage position of a mask stage of the charged particlebeam exposure apparatus in accordance with a mask stage coordinatesystem with an opening portion of a mask placed on the mask stage beingsituated in a first opening position; irradiating a first chargedparticle beam to a first irradiation position on a surface of a specimenthrough the opening portion of the mask, the first charged particle beambeing shaped through the opening portion situated in the first openingposition and then passing through an objective lens system of theexposure apparatus; measuring a first irradiation position in accordancewith a specimen stage coordinate system; moving the mask stage to asecond stage position to situate the opening portion in a second openingposition different from the first opening position; measuring the secondstage position of the mask stage in accordance with the mask stagecoordinate system; irradiating a second charged particle beam to asecond irradiation position on the surface of the specimen through theopening portion of the mask moved together with the mask stage, thesecond charged particle beam being shaped through the opening portionsituated in the second opening position and then passing through theobjective lens system; measuring the second irradiation position inaccordance with a specimen stage coordinate system; and obtaining ademagnification of the objective lens system from the first and secondstage positions and the first and second irradiation positions;adjusting the demagnification of the objective lens system correspondingto the obtained demagnification; measuring a rotation angle of a patternof the charged particle beam shaped through the mask and then irradiatedon the surface of the specimen via the objective optical system, afterthe adjusting; correcting the rotation of the pattern by rotating themask corresponding to the measured rotation angle; measuring a thirdstage position of the mask stage in accordance with a mask stagecoordinate system after correcting the rotation with the opening portionof the mask being situated in a third opening position; irradiating athird charged particle beam to a third irradiation position on thesurface of the specimen through the opening portion situated in thethird opening position, the third charged particle beam being shapedthrough the opening portion situated in the third opening position andthen passing through an objective lens system; measuring the thirdirradiation position in accordance with a specimen stage coordinatesystem; moving the mask stage to a fourth stage position to situate theopening portion in a fourth opening position different from the thirdopening position; measuring the fourth stage position of the mask stagein accordance with the mask stage coordinate system; irradiating afourth charged particle beam to a fourth irradiation position on thesurface of the specimen through the opening portion situated in thefourth opening position, the fourth charged particle beam being shapedthrough the opening portion situated in the fourth opening position andthen passing through the objective lens system; measuring the fourthirradiation position in accordance with a specimen stage coordinatesystem; and obtaining a phase difference between the specimen stagecoordinate system and the mask stage coordinate system from the thirdand fourth stage positions and the third and fourth irradiationpositions; and moving the mask stage by correction in accordance withthe phase difference.

A charged particle beam exposure apparatus according to another aspectof the present invention, comprises: a radiating unit configure toradiate a charged particle beam; an XY mask stage on which a mask havingan opening is placed and which moves the mask stage in X and Ydirections of a mask stage coordinate system; a mask stage measuringunit configured to measure a position of the XY mask stage in accordancewith the mask stage coordinate system; a deflector which deflects thecharged particle beam and changes the position of the charged particlebeam on a surface of the mask; an objective lens system whichdemagnifies a pattern of the charged particle beam shaped through themask and irradiates the specimen with the charged particle beam; aspecimen stage on which the specimen is placed and which moves thespecimen in X and Y directions of a specimen stage coordinate system; anobjective deflector which deflects the charged particle beam and changesthe position of the charged particle beam on a surface of the specimen;an irradiation position measuring unit configure to measure anirradiation position of the charged particle beam on the surface of thespecimen in accordance with the specimen stage coordinate system; and ademagnification measuring unit configure to measure a demagnification ofthe objective lens system on the basis of two positions of the XY maskstage measured at different opening positions respectively and aposition of the charged particle beam on the surface of the specimenthat was shaped through the opening of each of the opening positions.

A charged particle beam exposure apparatus according to another aspectof the present invention, comprises: a radiate unit configure to radiatea charged particle beam; an XY mask stage on which a mask having anopening is placed and which moves the mask in X and Y directions of amask stage coordinate system; a θ mask stage which rotates the mask inan XY plane of the mask stage coordinate system; an opening positionmeasuring unit configure to measure a position of the opening inaccordance with the mask stage coordinate system; a deflector whichdeflects the charged particle beam and changes the position of thecharged particle beam on a surface of the mask; an objective lens systemwhich demagnifies a pattern of the charged particle beam shaped throughthe mask and irradiates a specimen with the charged particle beam; aspecimen stage on which the specimen is placed and which moves thespecimen in X and Y directions of a specimen stage coordinate system; anobjective deflector which deflects the charged particle beam and changesthe position of the charged particle beam on a surface of the specimen;an irradiation position measuring unit configure to measure anirradiation position of the charged particle beam on the surface of thespecimen in accordance with the specimen stage coordinate system; arotation angle measuring unit configure to measure a rotation angle ofthe pattern of the charged particle beam in the objective lens system; aphase measuring portion configure to measure a phase of the mask stagecoordinate system with respect to the specimen stage coordinate systembased on a position of the XY mask stage measured at two openingpositions respectively and a position of the charged particle beam onthe surface of the specimen that was shaped through the opening of eachof the opening positions; and a driving unit configure to drive the XYmask stage and the θ mask stage corresponding to the measured phase.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a schematic configuration diagram showing an electron beamexposure apparatus according to an embodiment of the present invention;

FIG. 2 is a view showing in detail a portion of the electron beamexposure apparatus shown in FIG. 1;

FIG. 3 is a plan view showing the construction of a marking table of theelectron beam exposure apparatus shown in FIG. 1;

FIGS. 4A and 4B are views used to explain a mask stage phase measurementmethod and a demagnification measurement method for an objective lenssystem;

FIG. 5 is a view showing phases of a mask stage coordinate system for aspecimen stage coordinate system;

FIG. 6 is a flowchart showing a control method for a charged particlebeam exposure apparatus; and

FIG. 7 is a view used to explain a method of measuring an irradiationposition of an electron beam.

DETAILED DESCRIPTION OF THE INVENTION

An embodiment according to the present invention will be describedherein below with reference to the drawings.

FIG. 1 is a schematic configuration diagram showing an electron beamexposure apparatus according to the embodiment of the present invention.A beam emitted from an electron gun 1 is imaged through an illuminationlens 2, a projection lens 19, and a demagnification lens (objective lenssystem) 8, and is finally imaged on a main surface of an objective lens(objective lens system) 9. An image of a first shaping aperture 4 isformed onto a mask 6, and an image thus formed is created on thespecimen surface through the demagnification lens 8 and the objectivelens 9.

An opening portion 21 is provided in the first shaping aperture 4. Thedimensional shape of the opening portion 21 is a rectangle having oneside of 80 μm, for example. The electron beam emitted from the electrongun 1 can be deflected through a blanking deflector 3, and the beamposition on the first shaping aperture 4 can thereby be changed.

Referring to FIG. 2, the mask 6 is mounted over a θ stage 20, and the θstage 20 is mounted on an X stage 14 and a Y stage 15, whereby the mask6 can be moved. The mask 6 is moved by the X stage 14 and the Y stage 15in X and Y directions. The positions of the X stage 14 and the Y stage15 are under positional control of a laser measurement apparatus (laserinterferometer) 31. An opening portion 22 is provided in the mask 6, asshown in FIG. 2. In accordance with programs stored in a storage medium35, a CPU 34 acquires the position of the opening portion 22 from themeasurement result of the laser measurement device 31. The dimensionalshape of the opening portion 22 is smaller than the size of the firstshaping aperture image formed on the mask 6. The dimensional shape ofthe opening portion 22 is a rectangle having one side of 40 μm, forexample. The electron beam shaped through the opening portion 21 of thefirst shaping aperture can be deflected through a shaping deflector 5,and the beam position on the mask 6 can thereby be changed. The beampassed through the objective lens 9 can be deflected by an objectivedeflector 18. A marking table 10 is provided on an XY specimen stage 11and is movable in the X and Y directions in the specimen stagecoordinate system. The position of the XY specimen stage 11 is underpositional control of a laser measurement device (laser interferometer)32. As shown in FIG. 3, a cross mark 17 provided on the marking table 10is made from a beam-reflecting material different from a material of abase 24. For example, the base 24 is made of silicon, whereas the mark17 is made of a material such as gold or tungsten, for example. The beamposition on the marking table 10 can be changed by the objectivedeflector 18. A beam detector 23 detects electrons reflected from themarking table 10 and secondary electrons.

A function is provided that moves the mark 17 to the optical axisposition, scans the electron beam to be projected onto the mark 17 byusing the objective deflector 18, and then detects the irradiationposition of the electron beam in accordance with the distance betweenthe mark and the electron beam, which has been obtained throughcalculation performed by taking a signal detected by the beam detector23 into a mark signal processor 33 and a stage position measurementvalue of the laser measurement device 32. The CPU 34 executes theabove-described function in accordance with programs stored in thestorage medium 35. In FIG. 1, reference numeral 17 denotes an objectiveaperture, reference numeral 12 denotes a lens imaging system, andreference numeral 13 denotes a shaped-image imaging system 13.

A mask stage phase measurement method and an objective-lens-systemdemagnification measurement method according to the present embodimentwill now be described hereinbelow by using FIGS. 4A, 4B, and 5. The maskstage phase measurement and the objective-lens-system demagnificationmeasurement are executed by the CPU 34 in accordance with programsstored in the storage medium 35. Also, control of the X, Y, and θ maskstages 14, 15, and 20 corresponding to the measurement results isexecuted by the CPU 34 in accordance with programs stored in the storagemedium 35.

When measuring a mask stage phase, a rotation angle θ mp of the maskpattern formed through the demagnification lens 8 and the objective lens9 is preliminarily measured. The θ stage 20 is driven in accordance withthe measurement result to bring the mask pattern into to the state inwhich it is not rotated on the specimen. A method of measuring amask-pattern rotation angle as θ mp is described in, for example, Jpn.Pat. Appln. KOKAI Publication No. 7-22349. However, the measurement ofthe rotation angle θ mp is not necessary in the event of obtaining onlythe demagnification.

The opening portion 22 on the mask 6 is moved to a position A by usingthe shaping deflector. The positions of the X mask stage 14 and the Ymask stage 15 are measured by a laser measurement device in accordancewith the mask stage coordinate system, and the position A of the openingportion 22 is measured from the results thereof. The electron beamshaped through the first shaping aperture opening portion 21 isdeflected by the shaping deflector 5 to the opening portion 22 on themask. The electron beam is deflected to a position where the openingportion 22 is covered overall, as shown in FIG. 4A. The electron beamshaped through the opening portion 22 arrives at a position “a”, asshown in FIG. 4B. The position “a” is measured by a mark scan processperformed in accordance with the specimen stage coordinate system. Themark scan process is described in, for example, reference document (S.Nishimura: Jpn. J. Appl. Phys. Vol. 36 (1997), pp. 7517–7522: Evaluationof Shaping Gain Adjustment Accuracy Using Atomic Force Microscope inVariably Shaped Electron-Beam Writing Systems) and Jpn. Pat. Appln.KOKAI Publication No. 10-270337.

Subsequently, the opening portion 22 of the mask 6 is moved to aposition B (FIG. 4A). The positions of the X mask stage 14 and the Ymask stage 15 are measured by a laser measurement device in accordancewith the mask stage coordinate system, and the position B is measuredfrom the results thereof. The electron beam is deflected by the shapingdeflector to the opening portion 22 in the position B. The beam shapedthrough the opening portion 22 is then irradiated to a position b (FIG.4B) on the specimen. In a manner similar to the above, the position b ismeasured by the mark scan process in accordance with the specimen stagecoordinate system. The electron beam is irradiated to the two positionswithout altering the settings of the demagnification lens 8, theobjective lens 9, and the objective deflector 18.

The distance between the position A and the position B of the openingportion on the mask 6 is represented by L. Likewise, the distancebetween the beam position “a” and the beam position b of each specimensurface is represented by 1. In this case, the relationship can beexpressed as “demagnification η=1/L.”

In addition, the phase difference between a line segment connectingbetween the position A and the position B and an Xm axis of the maskstage coordinate system is represented by θ1. Likewise, the phasedifference between a line segment connecting between the position “a”and the position b and the X axis of the specimen stage coordinatesystem is represented by θ2. In this case, a phase θ of the mask stagecoordinate system for the specimen stage coordinate system can beexpressed as “θ2-θ1” (FIG. 5).

The phase differences θ1 and θ2 are thus obtained based on the Xm axisand the X axis. However, the phase differences θ1 and θ2 may be obtainedbased on a Ym axis and the Y axis. Still alternatively, the phasedifferences θ1 and θ2 may be obtained based on straight lines having thesame tilts in the individual coordinate systems. In addition, accordingto the above description, the opening positions A and B are individuallyobtained. However, only the positions of the X mask stage 14 and the Ymask stage 15 may be measured by the laser measurement device in thestate in which the opening portions are individually situated in theopening positions A and B. The positional relationship between the twoopening positions can be known and the distances and phase differencescan be obtained from the X mask stage 14 and the Y mask stage 15 in theindividual opening positions.

The positions of the X mask stage 14 and the Y mask stage 15 can beaccurately obtained. In the present embodiment, the measurement isperformed by way of measurement of the positions of the X mask stage 14and the Y mask stage 15, so that the measurements are each obtained witha measurement accuracy of 1 nm or less (accuracy of an actualmeasurement device recently used). Accordingly, also the measurementaccuracy of the distance L of each of the positions A and B is 1 nm orless. When the distance L is 500 μm, the error is 50 nm in theconventional case. However, in the present invention, the measurementcan be implemented with the accuracy of 1 nm or less, so that thedemagnification measurement error is 0.0002% (1 nm/500 μm×100).Therefore, in the case where a pattern of 300 μm is imaged on the mask,a linewidth accuracy or positional accuracy of 0.6 nm (i.e., 300μm×0.0002×0.01=0.6 nm) can be implemented.

Where the measurement accuracy of the irradiation position “a” and theirradiation position b is 1 nm (measurement accuracy of a recentexposure apparatus) and the distance is 50 μm, the phase measurementerror is 1/50,000 rad (=0.02 mrad). Where the movement amount of themask stage is 100 mm, the difference at both ends is as extremely smallas 2 μm (100 mm×0.02/1,000). As such, the positional movement accuracyof the pattern on the mask 6 is exhibited with a high value of 2 μm.Further, since the differing phase is corrected and the mask stage ismoved, when exposure is performed while the mask stage is being moved,the overall deflection range of Y of the shaping deflection becomeseffectively usable as a scan width.

A control method for the charged particle beam exposure apparatus, whichis configured by combining the above-described demagnificationmeasurement and the stage phase measurement will now be describedhereinbelow with reference to FIG. 6.

Using the method described above, processing is performed to measure ademagnification η (step S101). Then, the measured demagnification η iscompared with a desired demagnification η₀ (step S102). If the result isnot η=η₀, the lens system is adjusted so that the desireddemagnification can be obtained (step S103). If the measureddemagnification η has become the demagnification η₀, processing proceedsto next step S104. The arrangement may be such that if a requireddemagnification has reached an allowable error range, processing shiftsto next step S104.

Using a well known process, processing is performed to measure arotation angle η mp of a pattern of an electron beam that has beenshaped through a mask and has traveled through the objective lens system(step S104). The process to be used to measure the rotation angle η mpis selected from those of the type that does not rely on the phasedifference between the mask stage coordinate system and the specimenstage coordinate system. Then, the η stage 20 is driven corresponding tothe rotation angle η mp, and the rotation of the pattern is therebycorrected (step S105).

Subsequently, using the above-described method, processing is performedto measure a phase η of the specimen stage coordinate system for themask stage coordinate system (step S106).

When moving the mask stage, after correction is made corresponding tothe phase η, and the mask stage is moved (step S107). Where the maskpattern coordinate system is based on (Xm, Ym) and the mask stagecoordinates are based on (X, Y), moving the mask stage to satisfy thefollowing relationship enables the mask stage to be moved in conformitywith the phase of the specimen stage:ΔX=ΔXm×cos θ+ΔYm×sin θΔY=ΔYm×cos θ−ΔXm×sin θ

By performing the movement correction of the XY mask stage, the mask canbe moved to an accurate position. Then, by performing adjustment of thedemagnification, correction of the rotation angle of the pattern, andmovement correction of the mask stage according to the phase θ, thepattern can be accurately imaged on the specimen.

The present invention is not limited to the embodiment described above.While having been described by reference to the exemplified electronbeam exposure apparatus, the present invention can be adapted also to anion beam exposure apparatus. In addition, while the stage position ismeasured by the laser interferometer, there is no limitation thereto;and any other devices may be used as long as they are capable ofdefining the stage coordinates with high accuracy.

The process of measuring the irradiation position of the electron beamis not limited to the mark scan process. For example, as shown in FIG.7, a process is available in which scan is performed with an electronbeam over a mark M sized smaller than a scan range, and the center ofgravity of a screen-image object is obtained to thereby measure the beamposition. The mark M may be arbitrary, as shown in FIG. 7. A range Rlarger than the mark M is beam-scanned to thereby obtain data of thescreen-image object. The beam position can be obtained by obtaining thedata of the screen-image object. The present invention can be practicedby making various other changes without departing from the scope of theinvention.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A method for measuring a demagnification of a charged particle beamexposure apparatus, the method comprising: measuring a first stageposition of a mask stage of the charged particle beam exposure apparatusin accordance with a mask stage coordinate system having a measurementaccuracy of an order of 1 nm with an opening portion of a mask placed onthe mask stage being situated in a first opening position; irradiating afirst charged particle beam to a first irradiation position on a surfaceof a specimen through the opening portion of the mask, the first chargedparticle beam being shaped through the opening portion and then passingthrough an objective lens system; measuring the first irradiationposition in accordance with a specimen stage coordinate system having ameasurement accuracy of 1 nm; moving the mask stage to a second stageposition to situate the opening portion of the mask in a second openingposition different from the first opening position by a distance of anorder of several hundred μm; measuring the second stage position of themask stage in accordance with the mask stage coordinate system;irradiating a second charged particle beam to a second irradiationposition on the surface of the specimen through the opening portion ofthe mask moved together with the mask stage, the second charged particlebeam being shaped through the opening portion situated in the secondopening position and then passing through an objective lens system;measuring the second irradiation position in accordance with thespecimen stage coordinate system; and calculating a demagnification η ofthe charged particle beam exposure apparatus from a distance L betweenthe first and second stage positions and a distance 1 between the firstand second irradiation positions using an equation η=1/L.
 2. A methodaccording to claim 1, further comprising: adjusting the demagnificationof the charged particle beam exposure apparatus corresponding to thedemagnification obtained by the calculating.